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Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 175-178

High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE

(5) Manfra, M J a Weimann, N G a Mitrofanov, O a Waechtler, T a,b Tennant, D M a

a LUCENT TECHNOLOGIES (United States)

b CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; TWO DIMENSIONAL;

ALUMINUM GALLIUM NITRIDE; GATE LAG MEASUREMENTS; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0346885834 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200303277 Document Type: Article

Times cited : (6)

References (7)

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3
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6
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- accepted for publication
- L. E. Ocala, D. M. Tennant, P. D. Ye, accepted for publication, Microelectron. Eng. (2003).
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