The ferroelectric thin films of SrBi2Ta2O9 prepared using pulsed laser deposition

Chinese Science Bulletin

Volumn 42, Issue 7, 1997, Pages 612-614

  Yang, Pingxiong ^a   Zheng, Lirong ^a   Lin, Chenglu ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Ferroelectric thin film; Pulsed laser deposition; SBT

Indexed keywords

EID: 0346851250     PISSN: 10016538     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03182631     Document Type: Article

References (4)

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2. de Araujo, C. A. Paz, Cuchiare, J. D., McMillan, L. D. et al., Fatigue-free ferroelectric capacitors, Nature, 1995, 374: 627.
3. c bulk material, Appl. Phys. Lett., 1987, 51(8): 619.
4. Zheng, L. R., Chen, Y. Q., Lin, C. L. et al., Influence of the RTA on structural and interfacial properties of the PZT prepared by the PLD, Chinese Phys. Lett., 1994, 11: 518.