Theory of operation of high temperature Josephson fluxon-antifluxon transistor

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 5483-5488

  Terzioglu, Esin ^a   Beasley, M R ^a   Zhang, Y M ^b   Berkowitz, S J ^b  

^a STANFORD UNIVERSITY   (United States)

^b Conductus Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346714516     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362738     Document Type: Article

References (9)

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4. S. J. Berkowitz, Y. M. Zhang, H. Millison, K. Char, E. Terzioglu, and M. R. Beasley (unpublished).
5. A. M. Kadin, J. Appl. Phys. 68, 5741 (1990).
6. F. Raissi and J. E. Nordman, Appl. Phys. Lett. 65, 1838 (1994).
7. A. C. Scott, Am. J. Phys. 37, 52 (1969).
8. This point has been checked by using the SONNET em simulation package. The multilevel junction geometry was laid out using normal metals and simulated at high frequency with and without a ground plane.
9. Y. M. Zhang, D. Winkler, P. Å. Nilsson, and T. Claeson, Phys. Rev. B 51, 8684 (1995).