메뉴 건너뛰기




Volumn 336, Issue 1-2, 1998, Pages 354-357

The determination of e14 in (111)B-grown (In,Ga)As/GaAs strained layers

Author keywords

(In,Ga)As GaAs layers; Multiple quantum wells; Thermally detected optical absorption

Indexed keywords

INTERPOLATION; LIGHT ABSORPTION; LIGHT MODULATION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

EID: 0346629763     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01253-X     Document Type: Article
Times cited : (7)

References (15)
  • 15
    • 0346845522 scopus 로고    scopus 로고
    • Ph.D. Thesis of The University Blaise Pascal, Clermont-II, France
    • P. Ballet, Ph.D. Thesis of The University Blaise Pascal, Clermont-II, France, 1997.
    • (1997)
    • Ballet, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.