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Volumn 336, Issue 1-2, 1998, Pages 354-357
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The determination of e14 in (111)B-grown (In,Ga)As/GaAs strained layers
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Author keywords
(In,Ga)As GaAs layers; Multiple quantum wells; Thermally detected optical absorption
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Indexed keywords
INTERPOLATION;
LIGHT ABSORPTION;
LIGHT MODULATION;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR GROWTH;
PIEZOELECTRIC CONSTANT;
THERMALLY-DETECTED OPTICAL ABSORPTION (TDOA);
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0346629763
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)01253-X Document Type: Article |
Times cited : (7)
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References (15)
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