Hydrogenated amorphous silicon barriers for niobium-niobium josephson junctions

IEEE Transactions on Magnetics

Volumn 21, Issue 2, 1985, Pages 870-873

  Kroger, H ^a   Smith, L ^b   Jillie, D W ^c   Thaxter, J B ^d   Aucoin, R ^e   Currier, L W ^f   Potter, C N ^g   Shaw, D W ^f   Willis, P H ^h  

^a M I T Lincoln Leboratory ^*  (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c INTEL CORPORATION   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e BAE SYSTEMS   (United States)

^f RAYTHEON COMPANY   (United States)

^g Unisys   (United States)

^h NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346580416     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/TMAG.1985.1063748     Document Type: Article

References (17)

1. H. Kroger, L. N. Smith, D. W. Jillie and J. B. Thaxter, “Improved Nb-Si-Nb SNAP Devices”, IEEE Trans, Magn., Vol. MAG-19, pp. 783–786, 1983.
2. D.A. Rudman and M. R. Beasley, “Oxidized Amorphous-Silicon Superconducting Tunnel Junction Barriers”, Appl, Phys. Lett., Vol. 36, pp. 1010–1011, 1980.
3. F. Shinoki, A. Shoji, S. Kosaka, S. Takada and H. Hayakawa, “Niobium Nitride Tunnel Junctions with Oxidized Amorphous Silicon Barriers, Appl. Phys. Lett., Vol. 38, pp. 285–286, 1981
4. H. Kroger, L. N. Smith and D. W. Jillie, “Selective Niobium Anodization Process”, Appl. Phys. Lett., Vol. 39, pp.280-282, 1981.
5. L. N. Smith, H. Kroger and D. W. Jillie, “Uniformity and Stability of Nb-Si-Nb SNAP Josephson Junctions”, IEEE Trans. Magn., Vol. MAG-19, pp. 787–790, 1983.
6. L. N. Smith, J. B. Thaxter, D. W. Jillie and H. Kroger, “Sputtered a-Silicon Tunneling Barriers for Nb-Nb Josephson Junctions”, IEEE Trans. Magn., Vol. MAG-18, pp. 1571–1576, 1982.
7. T. D. Moustakas, “Thin-Film Growth of a-SiH x ”, Solar Energy Materials, Vol. 8, pp. 187–204, 1982.
8. D. Keith and S. D. Leslie, New Techniques for Electron Tunneling Junction Fabrication and its Application to Tantalum and Niobium”, Phys. Rev., Vol. B-18, pp. 4739–4761, 1978.
9. D. E. Carlson, C. R. Wronski, J. I. Pankove, P. J. Zanzucchi and D. L. Staebler, “Properties of Amorphous Silicon and a-Si Solar Cells”, RCA Review, Vol. 38, pp. 211-225, 1977.
10. H. Matsumura, M. Maeda and S. Furukawa, “Study on Impurity Diffusion in Glow-Discharge Amorphous Silicon”, Jpn. J. Appl, Phys., Vol. 22, pp, 771–774, 1983.
11. J. A. Appelbaum, “Exchange Model of Zero-Bias Tunneling Anomalies”, Phys. Rev., Vol. 154, pp. 633–643, 1967.
12. L. Y. L. Shen and J. M. Rowell, “Zero-Bias Tunneling Anomalies - Temperature, Voltage and Magnetic Field Dependence”, Phys. Rev., Vol. 165, pp. 566–577, 1967.
13. P. W. Anderson, “Localized Magnetic States and Fermi-Surface Anomalies in Tunneling”, Phys. Rev. Lett., Vol. 17, pp. 95–97, 1966.
14. I. Solomon, “Spin Effects in Amorphous Semiconductors”, Topics in Applied Physics, Vol. 36, Amorphous Semiconductors, Berlin: Springer-Verlag, 1979, pp. 189–213.
15. P. Nagels “Electronic Transport in Amorphous Semiconductors”, ref. 14, pp. 113-158.
16. J. Halbritter, “On Resonant Tunneling in Nb-Nb2O5- Diodes”, IEEE Trans. Magn., Vol. MAO-19, pp. 799–802, 1983.
17. C. T. Rogers and R. A. Buhrman, “Conductance Fluctuations and Low Frequency Noise in Josephson Junctions”, IEEE Trans. Magn., Vol. MAG-19, pp. 453–457, 1983.