Focal photodetector arrays based on CdHgTe heteroepitaxial layers grown by molecular-beam epitaxy on GaAs substrates

Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

Volumn 65, Issue 1, 1998, Pages 68-72

  Vasil'ev, V V ^a   Voinov V G ^a   Esaev, D G ^a   Zakhar'yash, T I ^a   Klimenko, A G ^a   Kozlov, A I ^a   Krymskii A I ^a   Marchishin, I V ^a   Ovsyuk, V N ^a   Romashko, L N ^a   Svitashev, K K ^a   Suslyakov, A O ^a   Talipov, N Kh ^a   Sidorov, Yu G ^a   Varavin, V C ^a   Dvoretskii S A ^a   Mikhailov N N ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COLD WELDING; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MULTIPLEXING EQUIPMENT; PHOTOSENSITIVITY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SUBSTRATES;

FOCAL PHOTODETECTOR ARRAYS;

PHOTODETECTORS;

EID: 0346505814     PISSN: 10709762     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. J. M. Arias, M. Zandian, S. H. Shin et al., "Dislocation density reduction by thermal annealing of HgCdTe epilayers grown by molecular beam epitaxy on GaAs substrates," J. Vac. Sci. Technol. 9, 1646 (1991).
2. V. S. Varavin, S. A. Dvoretsky, V. I. Liberman et al., "The controlled growth of high-quality mercury cadmium telluride," Thin Solid Films 267, 121 (1995).
3. A. Kawahara, A. Ajisawa, K. Myamoto et al., "Hybrid 256×256 LWIR FPA using MBE HgCdTe on GaAs," Proc. SPIE 2552, 411 (1995).
4. L. He, J. R. Yang, S. L. Wang et al., "A study of MBE growth and thermal annealing of p-type long-wavelength HgCdTe," in Ninth International Conference on Molecular Beam Epitaxy. Abstract Book, Malibu, California, Pepperdine University, August 5-9, 1996, p. 2.21.
5. V. S. Varavin, S. A. Dvoretsky, V. I. Liberman et al., "Molecular beam epitaxy quality HgCdTe films control of the composition distribution," J. Cryst. Growth 159, 1161 (1996).
6. V. N. Ovsyuk, S. A. Studenikin, A. O. Suslyakov et al., "Fabrication and characteristics of long-wavelength infrared planar photodiodes on molecular beam epitaxial p-HgCdTe films," Proc. SPIE 2746, 190 (1996).
7. 2 layers obtained by oxidizing monosilane with oxygen at 100°C," Khim. Fiz. 11, 1683 (1992).
8. 4 in fabrication and passivation of long-wavelength HgCdTe photodiode arrays," in Extended Abstracts of the 1995 International Conference on Solid-State Devices and Materials, Osaka, 1995, pp. 1061-1062.
9. A. G. Klimenko, V. G. Voǐnov, and A. R. Novoselov, "Apparatus and method for measuring the plastic deformation of samples of micron dimensions," Prib. Tekh. Éksp. No. 6, 119 (1996).
10. V. G. Voǐnov, A. G. Klimenko, T. N. Nedosekina, and A. R. Novoselov, "Plastic properties of indium microposts. Problem of contacting on HgCdTe," Avtometriya No. 4, 126 (1996).
11. G. Ziegler, M. Bruder, J. Wendler, and H. Maier, "Second-generation FPAs with MCT sensor arrays in hybrid approach," Proc. SPIE 1735, 151 (1992).