Transition metal impurities in 3C-SiC and 2H-SiC

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 116-120

  Assali, L V C ^a   Machado, W V M ^a   Justo, J F ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

LAPW methods; Silicon carbide; Transition metals

Indexed keywords

APPROXIMATION THEORY; CARBON; CRYSTAL LATTICES; CRYSTALLIZATION; ELECTRONIC PROPERTIES; ENERGY GAP; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS;

CONDUCTION BANDS; LATTICE STRUCTURES; TRANSITION ENERGY;

SILICON CARBIDE;

EID: 0346504210     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.008     Document Type: Conference Paper

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