Persistent photoluminescence in high-purity GaN

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 444-447

  Reshchikov, M A ^a   Zafar Iqbal, M ^a,b   Park, S S ^c   Lee, K Y ^c   Tsvetkov, D ^d   Dmitriev, V ^d   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

^b QUAID I AZAM UNIVERSITY   (Pakistan)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d TDI Inc   (United States)

Author keywords

Donor acceptor pair; GaN; Persistent photoluminescence

Indexed keywords

BAND STRUCTURE; ELECTRONS; HALL EFFECT; LASER BEAMS; PHOTOLUMINESCENCE; POINT DEFECTS; SAPPHIRE; VAPOR PHASE EPITAXY;

DONOR ACCEPTOR PAIR (DAP); EXCITATION LIGHT;

GALLIUM NITRIDE;

EID: 0346504198     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.028     Document Type: Conference Paper

References (6)

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