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Volumn 40, Issue 4, 1997, Pages 361-368

Experimental studies of N+ implantation into CVD diamond thin films

Author keywords

Carbon nitride; C n covalent bond; Electrically inactive deep level impurity; N+ implantation into diamond films; Raman spectroscopy; Ultraviolet photoluminescence spectroscopy (UV PL); X ray photoelectron spectroscopy (XPS)

Indexed keywords


EID: 0346477470     PISSN: 10069321     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02919421     Document Type: Article
Times cited : (2)

References (14)
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    • Nitrogen-implanted silicon, I. Damage annealing and lattice location
    • Mitchell, J. B., Pronko, P. P., Shewchun, J. et al., Nitrogen-implanted silicon, I. Damage annealing and lattice location, J. Appl. Phys., 1975, 46(1): 32.
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    • Nitrogen-implanted silicon, II. Electrical properties
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  • 13
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    • Deep-level nitrogen centers in laser-annealed ion-implanted silicon
    • Brower, K. L., Deep-level nitrogen centers in laser-annealed ion-implanted silicon, Phys. Rev. B., 1982, 26(11): 6040.
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    • Brower, K.L.1
  • 14
    • 0002022734 scopus 로고
    • X-ray photoelectron spectroscopic studies of electrode surfaces using a new controlled transfer technique
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.