-
1
-
-
0346016502
-
Warum es schwierig ist, kovalente Substanzen zu sintern
-
(S. Schnabel u. J. Kriegesmann, eds.)
-
S. Prochazka, Warum es schwierig ist, kovalente Substanzen zu sintern, in: techkeram 2, Proceedings der 2. Internationalen Fachausstellung für technische Keramik, Demat Exposition Managing Frankfurt/Main, Germany (S. Schnabel u. J. Kriegesmann, eds.), 73-96 (1989)
-
(1989)
Techkeram 2, Proceedings der 2. Internationalen Fachausstellung für Technische Keramik, Demat Exposition Managing Frankfurt/Main, Germany
, pp. 73-96
-
-
Prochazka, S.1
-
2
-
-
0040196085
-
Silicon carbide
-
(Editors: M. Schulz, H. Weiss) Springer, Berlin
-
W. V. Münch Silicon carbide, in Landolt-Boernstein, Numerical Data and Functional Relationships in Science and Technology, Vol. III, 17c (Editors: M. Schulz, H. Weiss) Springer, Berlin, 1984.
-
(1984)
Landolt-Boernstein, Numerical Data and Functional Relationships in Science and Technology
, vol.3
, pp. 17
-
-
Münch, W.V.1
-
3
-
-
0027575928
-
Electrical and optical characterization of SiC
-
G. Pensl, W.J. Choyke Electrical and optical characterization of SiC, Physica B 185, 264 (1993)
-
(1993)
Physica B
, vol.185
, pp. 264
-
-
Pensl, G.1
Choyke, W.J.2
-
4
-
-
0000728012
-
SiC based hard materials
-
R.Riedel (ed.), Wiley-VCH, Weinheim, N.Y.
-
K.A. Schwetz, SiC based hard materials, in: Handbook of Ceramic Hard Materials, Vol.2, R.Riedel (ed.), Wiley-VCH, Weinheim, N.Y. (2000) 683-748.
-
(2000)
Handbook of Ceramic Hard Materials
, vol.2
, pp. 683-748
-
-
Schwetz, K.A.1
-
5
-
-
25344447401
-
Liquid phase sintered silicon carbide shaped bodies having improved fracture toughness as well as high electrical resistance, and method of making them
-
European Patent 1070686B1, (21. Nov.2001), US 6 531 423 (2003)
-
European Patent 1070686B1, (21. Nov.2001), US 6 531 423 (2003), Liquid phase sintered silicon carbide shaped bodies having improved fracture toughness as well as high electrical resistance, and method of making them.
-
-
-
-
6
-
-
0001597635
-
The quantitative calculation of SiC polytypes from measurements of X-ray diffraction peak intensities
-
J. Ruska, L.J. Gauckler, J. Lorenz, H.Y. Rexer The quantitative calculation of SiC polytypes from measurements of X-ray diffraction peak intensities, J. Mater. Sci. 14 (1979) 2013-2017
-
(1979)
J. Mater. Sci.
, vol.14
, pp. 2013-2017
-
-
Ruska, J.1
Gauckler, L.J.2
Lorenz, J.3
Rexer, H.Y.4
-
7
-
-
0346016501
-
Zähigkeitserhöhung von Keramiken auf der Basis von flüssigphasen-gesintertem Siliciumcarbid
-
Thesis, RWTH Aachen
-
D.W. Saldsieder Zähigkeitserhöhung von Keramiken auf der Basis von flüssigphasen-gesintertem Siliciumcarbid, Thesis, RWTH Aachen (2002).
-
(2002)
-
-
Saldsieder, D.W.1
-
9
-
-
18844480731
-
Influence of powder properties on in-situ platelet re-inforcement of LPS-SiC
-
K. A. Schwetz, E. Schäfer, R. Telle Influence of powder properties on in-situ platelet re-inforcement of LPS-SiC, cfi/Ber.DKG 80 (2003) [3] E40-E45
-
(2003)
cfi/Ber.DKG
, vol.80
, Issue.3
-
-
Schwetz, K.A.1
Schäfer, E.2
Telle, R.3
-
10
-
-
0347907902
-
Vergleichende Untersuchungen zur direkten Feststoffspektroskopie mit DC-Arc und ETV-ICP: Entwicklung und Optimierung von System und Methode unter An-wendung keramischer Pulver
-
Thesis, TU Kosice
-
J.Hassler Vergleichende Untersuchungen zur direkten Feststoffspektroskopie mit DC-Arc und ETV-ICP: Entwicklung und Optimierung von System und Methode unter An-wendung keramischer Pulver, Thesis, TU Kosice (2001).
-
(2001)
-
-
Hassler, J.1
-
11
-
-
4243802676
-
Stability of high technology ceramics against liquid corrosion
-
K.A.Schwetz, J.Hassler Stability of high technology ceramics against liquid corrosion, cfi / Berichte DKG 79 (2002) [11] D14-19.
-
(2002)
Cfi / Berichte DKG
, vol.79
, Issue.11
-
-
Schwetz, K.A.1
Hassler, J.2
-
12
-
-
0346016496
-
New method for the quantitative analysis of free carbon in SiC
-
in: J.D. Cawley et al. (eds.); Silicon Carbide '87; Am.ceram.Soc. Inc., Westerville, Ohio
-
H. Knoch, K.A.Schwetz, W.D.Long New method for the quantitative analysis of free carbon in SiC, in: J.D. Cawley et al. (eds.), SiC-Symposium, Aug. 1987, Columbus OH, Ceramic Transactions Vol. 2, Silicon Carbide '87, 105-111 (1989), Am.ceram.Soc.Inc., Westerville, Ohio
-
(1989)
SiC-Symposium, Aug. 1987, Columbus OH, Ceramic Transactions
, vol.2
, pp. 105-111
-
-
Knoch, H.1
Schwetz, K.A.2
Long, W.D.3
-
13
-
-
0347277645
-
Herstellung und Eigenschaften von HIPSSiC Bauteilen für Brennkammern von stationären Gasturbinen
-
in: A Kranzmann u. V. Gramberg (Editors)
-
K.A. Schwetz, L.S. Sigl Herstellung und Eigenschaften von HIPSSiC Bauteilen für Brennkammern von stationären Gasturbinen, in: A Kranzmann u. V. Gramberg (Editors) Symposium 3, Werkstoffe für die Energietchnik, Werkstoffwoche '98, Müchen, Wiley-VCH, Weinheim, N.Y. (1999), p. 15-24.
-
(1999)
Symposium 3, Werkstoffe für die Energietchnik, Werkstoffwoche '98, Müchen, Wiley-VCH, Weinheim, N.Y.
, pp. 15-24
-
-
Schwetz, K.A.1
Sigl, L.S.2
-
14
-
-
0346016499
-
The sintering process for SiC, a review
-
Techn. Report 81-CRD-314, General Electric, Schenectady NY
-
S. Prochazka, The sintering process for SiC, a Review, Techn. Report 81-CRD-314, General Electric, Schenectady NY, (1981), pp. 16.
-
(1981)
, pp. 16
-
-
Prochazka, S.1
-
15
-
-
0347277647
-
Comparative optical investigations of sintered and monocrystalline black and green silicon carbide
-
in press
-
H. Werheit, K. A. Schwetz Comparative optical investigations of sintered and monocrystalline black and green silicon carbide, J. Solid State Chem (2003), in press
-
(2003)
J. Solid State Chem
-
-
Werheit, H.1
Schwetz, K.A.2
-
16
-
-
84990295155
-
Bestimmung der optischen Konstanten von Halbleitern an Proben mit nichtidealen Oberflächen
-
J. Jaumann, H. Werheit, Bestimmung der optischen Konstanten von Halbleitern an Proben mit nichtidealen Oberflächen, Z. Naturforsch. 24a, 1131 (1969)
-
(1969)
Z. Naturforsch
, vol.24 a
, pp. 1131
-
-
Jaumann, J.1
Werheit, H.2
-
17
-
-
0022957941
-
Microchemistry and high temperature properties of sintered SiC
-
Adam Hilger Ltd.; Chapter 4
-
R. Hamminger, G. Grathwohl, F. Thümmler, Microchemistry and high temperature properties of sintered SiC, in: Proc. 2nd Conf. Science of Hard Materials (Rhodos), Inst. Phys. Conf. Ser. No. 75, Adam Hilger Ltd., (1986), Chapter 4 p. 279-292
-
(1986)
Proc. 2nd Conf. Science of Hard Materials (Rhodos), Inst. Phys. Conf. Ser. No. 75
, pp. 279-292
-
-
Hamminger, R.1
Grathwohl, G.2
Thümmler, F.3
-
18
-
-
0025206793
-
The role of B and C additions on the micro-structure development of SSiC
-
G.H. Wroblewska, E. Nold, F. Thümmler The role of B and C additions on the micro-structure development of SSiC, Ceramics International 16 (1990) 201-209
-
(1990)
Ceramics International
, vol.16
, pp. 201-209
-
-
Wroblewska, G.H.1
Nold, E.2
Thümmler, F.3
-
19
-
-
0012800511
-
Intrinsic optical absorption in single crystal silicon carbide
-
(J.R. O'Connor and J. Smiltens, eds.), Pergamon Press, NY
-
H.R. Philipp, E.A. Taft Intrinsic optical absorption in single crystal Silicon Carbide, in: "Silicon Carbide - a high temperature semiconductor" (J.R. O'Connor and J. Smiltens, eds.), Pergamon Press, NY (1960), 366-370
-
(1960)
Silicon Carbide - a High Temperature Semiconductor
, pp. 366-370
-
-
Philipp, H.R.1
Taft, E.A.2
-
21
-
-
0000543163
-
On the photoionization of deep impurity centres in semiconductors
-
G. Lucovsky On the photoionization of deep impurity centres in semiconductors, Solid State Comm. 3 (1965) 299.
-
(1965)
Solid State Comm.
, vol.3
, pp. 299
-
-
Lucovsky, G.1
-
22
-
-
0347907899
-
-
Springer, Berlin
-
Gmelin Handbook of Inorganic Chemistry, 8th Edition, Si Suppl., Optical properties and spectra, Vol. B2, Springer, Berlin, 1984, p. 177
-
(1984)
Gmelin Handbook of Inorganic Chemistry, 8th Edition, Si Suppl., Optical Properties and Spectra
, vol.B2
, pp. 177
-
-
-
24
-
-
0036350835
-
Comparison between SEM and TEM imaging techniques to determine grain-boundary wetting in ceramic polycrystals
-
H.J. Kleebe Comparison between SEM and TEM imaging techniques to determine grain-boundary wetting in ceramic polycrystals, J. Am. Ceram. Soc. 85 [1] 43-48 (2002)
-
(2002)
J. Am. Ceram. Soc.
, vol.85
, Issue.1
, pp. 43-48
-
-
Kleebe, H.J.1
-
25
-
-
0347907898
-
Schotkky barrier formation in liquid phase sintered SiC
-
H. J. Kleebe, F. Siegelin Schotkky barrier formation in liquid phase sintered SiC, Z. Metallk. 94 (2003) 3
-
(2003)
Z. Metallk.
, vol.94
, pp. 3
-
-
Kleebe, H.J.1
Siegelin, F.2
-
26
-
-
0012775537
-
Korrelation zwischen Mikrostruktur und elektrischen Widerstand in flüssigphasengesintertem SiC untersucht mittels Transmissionselektronenmikroskopie
-
Theisis, University Bayreuth, Germany
-
F. Siegelin Korrelation zwischen Mikrostruktur und elektrischen Widerstand in flüssigphasengesintertem SiC untersucht mittels Transmissionselektronenmikroskopie, Theisis, University Bayreuth, Germany, 2002.
-
(2002)
-
-
Siegelin, F.1
-
27
-
-
0014812551
-
Solubility of boron in α-SiC
-
P.T.B. Shaffer Solubility of boron in α-SiC, Mater. Res. Bull. 5 (1970) 519-522
-
(1970)
Mater. Res. Bull.
, vol.5
, pp. 519-522
-
-
Shaffer, P.T.B.1
|