Effect of external uniaxial stress on the electronic properties and symmetry of p-GaAs/AlxGa1-x As quantum wells

High Pressure Research

Volumn 18, Issue 1-6, 2000, Pages 69-74

  Kolokolov, K I ^a   Savin, A M ^a   Beneslavski, S D ^a   Minina, N Ya ^a   Hansen, O P ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

GaAs; Heterostructure; Quantum well; Uniaxial compression

Indexed keywords

EID: 0346362874     PISSN: 08957959     EISSN: None     Source Type: Journal    
DOI: 10.1080/08957950008200950     Document Type: Article

References (9)

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