Investigation of metallization schemes for high temperature devices based on silicon carbide

Fresenius' Journal of Analytical Chemistry

Volumn 361, Issue 6-7, 1998, Pages 570-573

  Scholz, Th ^a   Getto, R ^c   Gottfried, K ^b   Kurz, G ^a   Kriz, J ^b   Lauer, V ^c  

^a SGS Institut Fresenius GmbH   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346344966     PISSN: 09370633     EISSN: None     Source Type: Journal    
DOI: 10.1007/s002160050951     Document Type: Article

References (3)

1. Porter LM, Davis F (1995) Materials Sience and Engineering 34:83-105
2. Dörner W, Mehrer H, Pokela PJ, Kolawa E, Nicolet MA (1991) Materials Science and Engineering 10:165-169
3. Pokela PJ, Kolawa E, Ruiz R, Reid JS, Nicolet MA (1992) Thin Solid Films 208: 33-37