Modeling of the chemical processes in the plasma of gaseous mixtures used in the etching of silicon. Part 2: SF6/O2;Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 2: SF6/O2

Quimica Nova

Volumn 21, Issue 1, 1998, Pages 34-42

  Bauerfeldt, G F ^a   Arbilla, G ^a  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

Numerical modeling; Plasma etching; SF6 decomposition

Indexed keywords

EID: 0346321418     PISSN: 01004042     EISSN: 16787064     Source Type: Journal    
DOI: 10.1590/s0100-40421998000100006     Document Type: Article

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