Induced magnetoresistance in semiconductor devices due to single sub-micron magnetic barriers

Physica B: Condensed Matter

Volumn 256-258, Issue , 1998, Pages 380-383

  Kubrak, V ^a   Rahman, F ^a   Overend, N ^a   Gallagher, B L ^a   Main, P C ^a   De Boeck, J ^b   Behest, M ^b   Marrows, C H ^c   Howson, M A ^c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Hybrid ferromagnetic semiconductor devices; Magnetoresistance; Nanomagnetometry

Indexed keywords

EID: 0346308858     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00561-4     Document Type: Article

References (7)

1. A.K. Geim et al., Appl. Phys. Lett. 71 (1997) 2379.
2. M. Johnson et al., Appl. Phys. Lett. 71 (1997) 974.
3. A. Nogaret et al., Phys. Rev. B 55 (1997) R16037.
4. N. Overend et al., Appl. Phys. Lett. 72 (1998) 1724.
5. E.P. Wohlfahrt, in: G.T. Rado, H. Suhl (Eds.), Magnetism, Ch. 7, vol. 3, Academic Press, New York, 1963.
6. M.E. Schabes, H.N. Bertram, J. Appl. Phys. 64 (1988) 5832.
7. B.J. van Wees, private communication.