On the role played by the silicon substrate in the crystallization, photo-vitrification and photo-oxidation of As50Se50 layers

Journal of Optoelectronics and Advanced Materials

Volumn 2, Issue 2, 2000, Pages 139-145

  Prieto Alcon R ^a   Marquez E ^a   Gonzalez Leal J M ^a  

^a UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

Amorphous chalcogenide; Arsenic Selenide; Crystallization; Far infrared spectrum; Photo oxidation; Photo vitrification; X ray diffraction

Indexed keywords

ARSENIC COMPOUNDS; CHALCOGENIDES; CRYSTALLIZATION; LIGHT; LIGHT SOURCES; OXIDATION; SELENIUM COMPOUNDS; SILICON; SUBSTRATES; THIN FILMS; VITRIFICATION; X RAY DIFFRACTION;

AMORPHOUS CHALCOGENIDE; CHALCOGENIDE MATERIALS; DEGREE OF DISORDER; DIFFERENT STRUCTURE; FAR INFRARED SPECTRUM; SELENIDES; SILICON SUBSTRATES; SPECTRAL IRRADIANCE;

IMAGE ENHANCEMENT;

EID: 0346300996     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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