Preparation of Aluminum‐Doped Zinc Oxide Films by a Normal‐Pressure CVD Method

Journal of the American Ceramic Society

Volumn 75, Issue 12, 1992, Pages 3469-3472

  Nishino, Junichi ^a   Ohshio, Shigeo ^a   Kamata, Kiichiro ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346270196     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1992.tb04452.x     Document Type: Article

References (14)

1. Low Cost, Non‐Vacuum Techniques for the Preparation of Thin/Thick Films for Photovoltaic Applications
2. Optical Properties of Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
3. Aluminum Doped Zinc Oxide Thin Films Deposited by Ion Beam Sputtering
4. Optical Properties of Sputter‐Deposited ZnO:Al Thin Films
5. Preparation and Properties of Pyrolytic Zirconium Dioxide Films
6. Deposition of Aluminum‐Doped Zinc Oxide Thin Films by Spray Pyrolysis
7. Anomalous Optical Absorption Limit in InSb
8. The Interpretation of the Properties of Indium Antimonide
9. 3
10. Self‐Energy Shifts in Heavily Doped, Polar Semiconductors
11. Band‐Gap Narrowing in Heavily Doped Many‐Valley Semiconductors
12. Band‐Gap Tailoring of ZnO by Means of Heavy Al Doping