On the microstructural origin of reversible photoinduced transformations in amorphous As2Se3

Opto-Electronics Review

Volumn 11, Issue 1, 2003, Pages 19-25

  Shpotyuk, O I ^a,b  

^a SCIENTIFIC RESEARCH COMPANY CARAT   (Ukraine)

^b CZESTOCHOWA UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Amorphous semiconductors; IR Fourier spectroscopy; Photoinduced changes

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CHEMICAL BONDS; COMPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLASS TRANSITION; INFRARED RADIATION; LIGHT ABSORPTION; MICROSTRUCTURE; MOLECULAR VIBRATIONS; OPTOELECTRONIC DEVICES; RAMAN SCATTERING; REFRACTIVE INDEX; STRUCTURE (COMPOSITION); SYNTHESIS (CHEMICAL); THIN FILMS;

ATOMIC DISPLACEMENTS; HETEROPOLAR BONDS; PHOTOINDUCED TRANSFORMATIONS; PHOTOSTRUCTURAL CHANGES; TOPOLOGICAL DEFECTS;

ARSENIC COMPOUNDS;

EID: 0346266237     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

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