Native centers of electron and hole traps in thin amorphous films of As2S3 and As2Se3

Journal of Optoelectronics and Advanced Materials

Volumn 5, Issue 5, 2003, Pages 1121-1134

  Verlan, V I ^a  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

Amorphous films; AS2S3; As2Se3; Photoconductivity; Trap centers

Indexed keywords

ARSENIC COMPOUNDS; ELECTRIC CHARGE; ELECTRON BEAMS; ELECTRON TRAPS; HOLE TRAPS; PHOTOCONDUCTIVITY; PHOTONS; PHOTOSENSITIVITY; THERMAL EFFECTS; X RAY ANALYSIS;

MOBILITY BANDS; OPTICAL INFORMATION; TRAP CENTERS;

AMORPHOUS FILMS;

EID: 0346245147     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (25)

1. Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics, Ed. Andrei Andriesh and Mario Bertolotti, Nato ASI Series. 3. High Technology - v. 36, Kluwer Academic Publishers, Dordrecht/Boston/London, 1996.
2. M. Popescu, A. Andriesh, V. Ciumash, M. Iovu, S. Shutov, D. Tsiuleanu, Physic of Chalcogenide Glass (in romanian), Bucureşti-Chişinǎu, Ed. Ştiintã I.E.P, "Ştiinţa", 1996.
3. A. Popescu, Photoinduced phenomena and elements of integrated optic on the base of noncrystalline chalcogenide semiconductors, (in romanian), Chişinǎu, "Ştiinţa", p. 171, 2003.
4. A. V. Kolobov, K. Tanaka, Handbook of Advanced Electronic and Photonic Materials and Devices, v.5, Ed. H.S. Nalwa (USA), Academic Press, p. 47 - 90.
5. M. S. Iovu, S. D. Shutov, A. M. Andriesh, E. I. Kamitsos, P. E. Varsamis, D. Furniss, A. B. Seddon, M. Popescu, J. Optoelectron. Adv. Mater. 3(2), 443 (2001).
6. A. M. Andriesh, S. A. Malkov, V. I. Verlan, Fiz. Tekh. Poluprovodnicov (Russia) 29, 1319 (1995), Semiconductors 29, (July 1995)
7. A. M. Andriesh, S. A. Malkov, V. I. Verlan, Fiz. Tekh. Poluprovodnicov (Russia) 29, 1319 (1995), Semiconductors 29, (July 1995)
8. M. Abkowiz, J. M. Marcovics, Philos. Mag. B 49, B31 (1984).
9. A. M. Andriesh, N. A. Gumeniuc, S. A. Malkov, V. I. Verlan, Izvestia AN MSSR, seria fiz.-mat. Nauk (Moldova), 2, 34 (1989) 3; A. Andriesh, V. Verlan, CAS'2001, Proceedings of International Semiconductor Conference, 24-th Ed., October 9-13, 2001, Sinaia, Romania, v.1, p. 173.
10. A. M. Andriesh, N. A. Gumeniuc, S. A. Malkov, V. I. Verlan, Izvestia AN MSSR, seria fiz.-mat. Nauk (Moldova), 2, 34 (1989) 3; A. Andriesh, V. Verlan, CAS'2001, Proceedings of International Semiconductor Conference, 24-th Ed., October 9-13, 2001, Sinaia, Romania, v.1, p. 173.
11. S. M. Ryvkin, Semicond. Photoelectr. Phenomena (Russia), Moscow, Phys.-Math. Liter. Publ. House, 1963.
12. A.M. Andriesh, M. S. Iovu, V. I. Verlan, I. G. Glianico, S. A. Malkov, E. L. Romahiuk, M. R. Chernii, Semicond. Device and Materials, (Moldova), Chişinǎu, "Ştiinţa", Publish. House, 133 (1987).
13. G. J. Adriaennssens, Philos. Mag. B62, 79(1990).
14. J. G. Simmons, G. W. Taylor. J. Phys. C: Solid State Phys., 7, 3051 (1974). J. G. Simmons, M. C. Tam. Phys. Rev. B, 7, 3706(1973).
15. J. G. Simmons, G. W. Taylor. J. Phys. C: Solid State Phys., 7, 3051 (1974). J. G. Simmons, M. C. Tam. Phys. Rev. B, 7, 3706(1973).
16. A. Rose, Concepts in Photoconductivity, Moscow, "Mir", Publishing House, 1966.
17. V. I. Verlan, to be published.
18. A. M. Andriesh, V. I. Verlan, Yu. N. Ivashchenko, S. A. Malkov, M. R. Chernii, Yu. P. Kornukov, V. S. Railiean, D. Poltavchenko. Mnogokomponentnye poluprovodniki, (Moldova), Chişinǎu, "Ştiinţa", Publish. House, 118(1985). A. M. Andriesh S. A. Malkov. In "Proceedings of SPIE, in Recording Systems: High Resolution Cameras and Recording Devices and Laser Scanning and Recording Systems", ed. by Leo Beiser and Reimar K. Lenz, 1987, 171(1993).
19. A. M. Andriesh, V. I. Verlan, Yu. N. Ivashchenko, S. A. Malkov, M. R. Chernii, Yu. P. Kornukov, V. S. Railiean, D. Poltavchenko. Mnogokomponentnye poluprovodniki, (Moldova), Chişinǎu, "Ştiinţa", Publish. House, 118(1985). A. M. Andriesh S. A. Malkov. In "Proceedings of SPIE, in Recording Systems: High Resolution Cameras and Recording Devices and Laser Scanning and Recording Systems", ed. by Leo Beiser and Reimar K. Lenz, 1987, 171(1993).
20. S. M. Sze, "Physics of Semiconductor Devices", John Willy & Sons, 1, 455(1981).
21. T. C. Anderson, Phys. Rev. Lett. 34, 953 (1975).
22. M. Kastner, D. Adler, H. Fritzsche, (1976) Valence -alternation model for localized gap states in lone - pair semiconductors, Phys. Rev. Lett. 37, 1504 (1976).
23. Y. Katayama, M.Yao, Y. Ajiro, H. Endo, J. Phys. Soc. Jpn. 58, 1811 (1989).
24. Electronic phenomena in chalcogenide glassy semiconductors, (Russia), Sankt-Petersburg, "Naua", p. 475, 1996.
25. A. V. Kolobov, J. Tominaga, J. Optoelectron. Adv. Mater. 4(3), 679 (2002).