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Physical Review Letters
Volumn 70, Issue 18, 1993, Pages 2782-2785
Shape transition in growth of strained islands: Spontaneous formation of quantum wires
Author keywords

[No Author keywords available]
Indexed keywords

EID: 0346152016     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.70.2782     Document Type: Article
Times cited : (841)
References (33)
  • 1
  • 2
    • 84927503658 scopus 로고    scopus 로고
    • 34, 123 (1963).
  • 5
    • 84927480602 scopus 로고    scopus 로고
    • For a simplified picture of strain relief by dislocations, see J. Tersoff, Appl. Phys. Lett. (to be published).
  • 10
    • 84927480248 scopus 로고    scopus 로고
    • David Vanderbilt and L. K. Wickham, in Evolution of Thin-Film and Surface Microstructure, MRS Proceedings Vol. 202, edited by C. V. Thompson, J. Y. Tsao, and D. J. Srolovitz (Materials Research Society, Pittsburgh, 1991), p. 555.
  • 14
    • 84927498456 scopus 로고    scopus 로고
    • In equilibrium the substrate is typically wetted, if at all, by a single atomic layer of the strained material;
  • 26
    • 84927507719 scopus 로고    scopus 로고
    • These ``corner'' terms have a somewhat complex form, and depend weakly on the size and shape of the island. Numerical tests indicate that they are not important in understanding the overall behavior.
  • 29
    • 84927475882 scopus 로고    scopus 로고
    • See, for example, Proceedings of the Fifth International Conference on Modulated Semiconductor Structures [Surf. Sci. 267 (1992)].
  • 30
    • 84927475746 scopus 로고    scopus 로고
    • In the limit of long, flat islands, which can be solved exactly for arbitrary density [7], the optimal width α0 is replaced by (π f / sin π f ) e φ h eΓ/ch , where f is the coverage fraction (i.e., the ratio of the width s to the center-to-center island spacing). This differs from the low-coverage result only by the prefactor π f / sin ( π f ), which becomes unity for low coverage (f -> 0), and is only increased by 11% at the coverage f = case 1 over 4 corresponding to the Ge-on-Si experiment. The exponential dependence of α0 on island height and stress is unaffected.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.