Polariton mediated resonant Raman scattering in II–VI microcavities: Exciton lifetime effects

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 20, 2003, Pages

  Bruchhausen, A ^a   Fainstein, A ^a   Jusserand, B ^b   Andre R ^b  

^a CENTRO ATÓMICO BARILOCHE   (Argentina)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ATOMIC PARTICLE; ELECTRON; ENERGY; EXCITON; LIGHT SCATTERING; PHONON; POLARITON; QUANTUM MECHANICS; THEORY;

EID: 0346100532     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.205326     Document Type: Article

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27. In Ref. 18 we arrive at this same expression but based on wrong assumptions for the final density of states and for the polariton escape time appearing in Eq. (1).
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31. 2s must be added before or after squaring in the Raman efficiency. A description similar to the one presented here has been discussed by J. Menéndez and M. Cardona, Phys. Rev. Lett. 51, 1297 (1983), to account for the interference between allowed and forbidden Raman scattering by LO phonons in bulk GaAs. Impurity induced scattering is expected to be incoherent. As we will discuss in a forthcoming publication, we believe that the oscillations observed in the first order Raman spectra in Fig. 33 indicate that disorder is active as intermediate state in the scattering process.