Modeling of heterojunction HgCdTe photodiodes using approximate k · p approach

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 673-677

  Ariel, V ^a   Bahir, G ^b  

^a IBM HAIFA RESEARCH LAB   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Heterojunction; HgCdTe; k p approach; Modeling

Indexed keywords

EID: 0346071712     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0214-5     Document Type: Article

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