SCOPUS 정보 검색 플랫폼

Journal of Optoelectronics and Advanced Materials

Volumn 3, Issue 2, 2001, Pages 481-484

OPTICAL and ELECTRICAL PROPERTIES of AMORPHOUS (GeS2)100-xGax THIN FILMS

(3) Ivanova, Z G a Petkov, P b Vassilev, V S b

a BULGARIAN ACADEMY OF SCIENCES (Bulgaria)

b UNIVERSITY OF CHEMICAL TECHNOLOGY AND METALLURGY (Bulgaria)

Author keywords

Amorphous thin films; Chalcogenide glasses; Photoinduced changes

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ENERGY GAP; GALLIUM; GALLIUM COMPOUNDS; LIGHT ABSORPTION; REFRACTIVE INDEX; SEMICONDUCTING GERMANIUM; THIN FILMS;

AMORPHOUS THIN FILMS; CHALCOGENIDE GLASS; ELECTRON WORK FUNCTIONS; OPTICAL AND ELECTRICAL PROPERTIES; PHOTOINDUCED CHANGE; SEMICONDUCTING MATERIALS; SPECTRAL DISTRIBUTION; STRUCTURAL PECULIARITIES;

GERMANIUM COMPOUNDS;

EID: 0346026399 PISSN: 14544164 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (4)

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