Effect of oxygen implantation on ionoluminescence of porous silicon

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 187-192

  Zuk, J ^a   Ochalski, T J ^a   Kulik, M ^a   Liskiewicz J ^a   Kobzev, A P ^b  

^a MARIA CURIE SK ODOWSKA UNIVERSITY   (Poland)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

Ion implantation; Ionoluminescence; Porous silicon

Indexed keywords

EID: 0345986846     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00094-5     Document Type: Article

References (10)

1. D. Ghose, R. Hippler, in: D.R. Vij (Ed.), Luminescence of Solids, Plenum Press, New York, 1998, p. 189.
2. T.E. Tsai, D.L. Griscom, M.E. Gingerich, Nucl. Instr. and Meth. B 32 (1988) 377.
3. L.H. Abu-Hassan, P.D. Townsend, Nucl. Instr. and Meth. B 32 (1988) 293.
4. S.J. Pearton, in: D. Stievenard, J.C. Bourgoin (Eds.), Ion Implantation in Semiconductors, Trans Tech Publications, Switzerland, 1988, p. 247.
5. J. Zuk, R. Kuduk, M. Kulik, J. Liśkiewicz, D. Ma̧czka, P.V. Zhukovski, V.F. Stelmakh, V.P. Bondarenko, A.M. Dorofeev, J. Lumin. 57 (1993) 57.
6. R. Kuduk, J. Zuk, D. Maczka, Nucl. Instr. and Meth. B 85 (1994) 794.
7. A.G. Cullis, L.T. Canham, G.M. Williams, P.W. Smith, O.D. Dosser, J. Appl. Phys. 75 (1994) 493.
8. T. Suzuki, T. Sakai, L. Zhang, Y. Nishiyama, Appl. Phys. Lett. 66 (1995) 215.
9. H. Munder, M.G. Berger, S. Frohnhoff, M. Thonissen, H. Luth, M. Jeske, J.W. Schultze, J. Lumin. 57 (1993) 223.
10. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon, New York, 1985.