Stoichiometry-dependent deep levels in p-type InP

Journal of Applied Physics

Volumn 81, Issue 7, 1997, Pages 3151-3154

  Nishizawa, Jun Ichi ^a,b   Kim, Kiyoon ^a   Oyama, Yutaka ^a,b   Suto, Kén ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345963475     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364349     Document Type: Article

References (11)

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