InAs/Si-Based Quantum-Dot Heterostructures for New-Generation Optoelectronic and Microelectronic Devices

Russian Microelectronics

Volumn 30, Issue 2, 2001, Pages 99-105

  Petrov, V N ^a   Tsyrlin, G E ^a   Golubok, A O ^a   Komyak, N I ^a   Ustinov, V M ^b   Ledentsov, N N ^b   Alferov, Zh I ^b   Bimberg, D ^c  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345859641     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1009481810935     Document Type: Article

References (17)

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