Thermal stability of interfaces between metals and InP-based materials

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 715-719

  Ashizawa, Y ^a   Nozaki, C ^a   Noda, T ^a   Sasaki, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Electrode; High electron mobility transistor (HEMT); Metal semiconductor interface; Rutherford backscattering spectrometry; Stability

Indexed keywords

EID: 0345837804     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666529     Document Type: Article

References (12)

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