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Volumn 32, Issue 3, 1998, Pages 320-321

Photosensitivity of porous silicon-layered III-VI semiconductors heterostructures

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EID: 0345828059     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187558     Document Type: Article
Times cited : (2)

References (12)
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    • A. A. Lebedev and Yu. V. Rud', Pis'ma Zh. Tekh. Fiz. 21, 80 (1995) [Tech. Phys. Lett. 21, 79 (1995)].
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    • A. A. Lebedev and Yu. V. Rud', Pis'ma Zh. Tekh. Fiz. 22, 12 (1995) [Tech. Phys. Lett. 22, 483 (1995)].
    • (1995) Tech. Phys. Lett. , vol.22 , pp. 483
  • 8
    • 21844518886 scopus 로고
    • E. V. Astrova, A. A. Lebedev, A. D. Remenyuk, and Yu. V. Rud', Fiz. Tekh. Poluprovodn. 29, 1649 (1995) [Semiconductors 29, 858 (1995)].
    • (1995) Semiconductors , vol.29 , pp. 858
  • 10
    • 84866071609 scopus 로고
    • V. L. Bakumenko, Z. D. Kovalyuk, L. N. Kurbatov, V. G. Tagaev, and V. F. Chishko, Fiz. Tekh. Poluprovodn. 12, 374 (1978) [Sov. Phys. Semicond. 12, 216 (1978)].
    • (1978) Sov. Phys. Semicond. , vol.12 , pp. 216
  • 12
    • 0347246564 scopus 로고    scopus 로고
    • V. F. Agekyan, Yu. V. Rud', Yu. A. Stepanov, and A. A. Lebedev, Fiz. Tverd. Tela (St. Petersburg) 38, 2994 (1996) [Phys. Solid State 38, 1637 (1996)].
    • (1996) Phys. Solid State , vol.38 , pp. 1637


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.