메뉴 건너뛰기




Volumn 59, Issue 1-3, 1999, Pages 258-260

Theoretical LEED parameters for the zinc-blende GaN (110) surface

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ATOMS; CRYSTAL ATOMIC STRUCTURE; ELECTRON ENERGY LEVELS; LATTICE CONSTANTS; LOW ENERGY ELECTRON DIFFRACTION; PERTURBATION TECHNIQUES; SURFACES;

EID: 0345533949     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00348-1     Document Type: Article
Times cited : (5)

References (15)
  • 12
    • 0028756032 scopus 로고
    • Diamond, SiC and nitride wide-bandgap semiconductors
    • in: C.H. Carter, Jr., G. Gildenblat, S. Nakamura, R.J. Nemanich (Eds.). Mater. Res. Soc., Pittsburg
    • J. Neugebauer, C.G. Van de Walle, Diamond, SiC and nitride wide-bandgap semiconductors, in: C.H. Carter, Jr., G. Gildenblat, S. Nakamura, R.J. Nemanich (Eds.). MRS Symp. Proc. No. 339, Mater. Res. Soc., Pittsburg, 1994.
    • (1994) MRS Symp. Proc. , vol.339
    • Neugebauer, J.1    Van De Walle, C.G.2
  • 15
    • 26744463359 scopus 로고
    • C.A. Swarts, W.A. Goddard III, T.C. Mc Gill, J. Vac. Sci. Technol. 17(1980) 982; Surf. Sci. 110 (1981) 400.
    • (1981) Surf. Sci. , vol.110 , pp. 400


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.