Formation of metal silicide-silicon contact with ultralow contact resistance by silicon-capping silicidation technique

Applied Physics Letters

Volumn 64, Issue 25, 1994, Pages 3449-3451

  Yamada, Keiichi ^a   Tomita, Kazuo ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

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Indexed keywords

EID: 0345458800     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.111238     Document Type: Article

References (11)