Formation of TaSi2 and associated fractal growth on Si surface upon high current pulsed Ta-ion implantation

Journal of Alloys and Compounds

Volumn 363, Issue 1-2, 2004, Pages 231-236

  Cheng, X Q ^a   Wang, R S ^a   Tang, X J ^a   Liu, B X ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Crystal structure; Ion implantation; Transition metal compounds; X ray diffraction

Indexed keywords

ANNEALING; CURRENT DENSITY; FRACTALS; GRAIN SIZE AND SHAPE; GROWTH (MATERIALS); ION IMPLANTATION; SILICON WAFERS; SUBSTRATES; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

ENERGETIC ION BEAMS; METAL VAPOR VACUUM ARC (MEVVA);

TANTALUM COMPOUNDS;

EID: 0345375360     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(03)00491-2     Document Type: Article

References (18)

1. Kobawa E., Chen J.S., Reid J.S., Pokela P.J., Nocolet M.A. J. Appl. Phys. 70:1991;1369.
2. Massalski T.B. Binary Phase Diagrams. 1991;The Materials Information Society, Materials Park.
3. Wang S.Q. MRS Bull. 19:1994;30.
4. Samsonov G.V., Dvorina L.A., Rud B.M. Silicides. 1973;Metallurgia, Moscow.
5. Brown I.G., Gavin J.E., MacGill R.A. Appl. Phys. Lett. 47:1985;358.
6. Zhu D.H., Tao K., Pan F., Liu B.X. Appl. Phys. Lett. 62:1993;2356.
7. Liu B.X., Zhu D.H., Lu H.B., Pan F., Tao K. J. Appl. Phys. 75:1994;3847.
8. Zhu D.H., Chen Y.G., Liu B.X. Nucl. Instrum. Methods. B101:1995;394.
9. Gao K.Y., Liu B.X. Nucl. Instrum. Methods. B132:1997;68.
10. Gao K.Y., Zhu H.N., X Liu B. Nucl. Instrum. Methods. B140:1998;126.
11. Zhang X.J., Zhang H.X., Sheng F.S., Sheng S.J., Li Q., Han Z.Z. J. Beijing Normal Univ. 28:1992;148.
12. Gao H.J., Xue Z.Q., Xue Q., Wu Q.D., Pang S.J. Solid State Commun. 97:1996;579.
13. Wang M., Liu X.Y., Strom C.S., Bennema P., Vanenckvort W., Ming N.B. Phys. Rev. Lett. 80:1998;3089.
14. M. Mayer, SIMNRA, V4.0, Max Planck Institute (1997).
15. Brever H., Searsy A.W. J. Am. Ceram. Soc. 33:1950;291.
16. E. Cerwenka, Diss. Techn. Hochsch. Graz. (1951).
17. Liu B.X., Lai W.S., Zhang Q. Mater. Sci. Eng. R29:2000;1.
18. Zhu H.N., Gao K.Y., Liu B.X. Phys. Rev. B62:2000;1647.