Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 206-208

  Rudamas, C ^a   Martinez Pastor J ^a   Gonzalez L ^b   Vinattieri, A ^c   Colocci, M ^c  

^a UNIVERSITY OF VALENCIA   (Spain)

^b CSIC   (Spain)

^c UNIVERSITY OF FLORENCE   (Italy)

Author keywords

Disorder; Photoluminescence; Quantum wells

Indexed keywords

ELECTRON MOBILITY; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

FERMI FUNCTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0345373830     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00774-9     Document Type: Conference Paper

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