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Volumn 2, Issue , 2003, Pages 977-978
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Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers
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Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
CARRIER CONCENTRATION;
ELECTRIC CURRENTS;
HIGH TEMPERATURE EFFECTS;
LIGHT ABSORPTION;
MATHEMATICAL MODELS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
NANOSTRUCTURES;
PHOTONICS;
QUANTUM WELL LASERS;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR QUANTUM WELLS;
AUGER RECOMBINATION;
HIGH TEMPERATURE DEGRADATION;
QUANTUM WELL LASERS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
AUGER RECOMBINATION;
HIGH TEMPERATURE PERFORMANCE;
HIGH-TEMPERATURE DEGRADATION;
PERFORMANCE DEGRADATION;
QUANTUM-WELL LASERS;
STRONG-COUPLING;
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EID: 0345328266
PISSN: 10928081
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (16)
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References (4)
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