Determination of the phase composition of surface layers of porous silicon by ultrasoft X-ray spectroscopy and X-ray photoelectron spectroscopy techniques

Journal of Electron Spectroscopy and Related Phenomena

Volumn 114-116, Issue , 2001, Pages 895-900

  Terekhov, V A ^a   Kashkarov, V M ^a   Manukovskii, ^a   Schukarev, A V ^b   Domashevskaya, E P ^a  

^a VORONEZH STATE UNIVERSITY   (Russian Federation)

^b AO Mekhanobr Analit   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; PHASE COMPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRASOFT X RAY EMISSION SPECTROSCOPY (USXES);

POROUS SILICON;

EID: 0345203543     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(00)00393-5     Document Type: Article

References (5)

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3. Domashevskaya E.P., Kashkarov V.M., Manukovskii E.Yu., Schukarev A.V., Terekhov V.A. XPS, USXS and PLS investigations of porous silicon. J. Electron. Spectrosc. Relat. Phenom. 88-91:1998;969-972.
4. Domashevskaya E.P., Golikova O.A., Terekhov V.A., Trostyansky S.N. J. Non-Cryst. Solids. 90:1987;135-138.
5. Beyer W., Wagner H. J. Non-Cryst. Solids. 59-60:1983;161-168.