Study of thin chemical vapour deposited tungsten oxide films by positron annihilation spectroscopy

Thin Solid Films

Volumn 347, Issue 1-2, 1999, Pages 302-306

  Djourelov, N ^a   Gogova, D ^b   Misheva, M ^c  

^a INSTITUTE FOR NUCLEAR RESEARCH AND NUCLEAR ENERGY   (Bulgaria)

^b CTRL LAB SOLAR ENER NEW ENER S   (Bulgaria)

^c UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FLOW OF FLUIDS; POSITRONS; SPECTROSCOPY; STRUCTURE (COMPOSITION); TEMPERATURE; TUNGSTEN COMPOUNDS;

DEPOSITION PARAMETERS; GAS FLOW RATE; ORTHOPOSITRONIUM; POSITRON ANNIHILATION SPECTROSCOPY; TUNGSTEN OXIDE; VOIDS;

THIN FILMS;

EID: 0345201758     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00014-0     Document Type: Article

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