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Volumn 82, Issue 6, 1997, Pages 3089-3091

Electroreflectance of surface-intrinsic- n+-type doped GaAs

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0345145589     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366148     Document Type: Article
Times cited : (4)

References (16)
  • 2
    • 0001720790 scopus 로고
    • edited by T. S. Moss North-Holland, New York
    • D. E. Aspnes, in Handbook on Semiconductors, edited by T. S. Moss (North-Holland, New York, 1980), Vol. 2, p. 109.
    • (1980) Handbook on Semiconductors , vol.2 , pp. 109
    • Aspnes, D.E.1
  • 3
    • 0004281127 scopus 로고
    • edited by M. Balkanski North-Holland, New York
    • F. H. Pollak, in Handbook on Semiconductors, edited by M. Balkanski (North-Holland, New York, 1994).
    • (1994) Handbook on Semiconductors
    • Pollak, F.H.1
  • 4
    • 0000348441 scopus 로고
    • edited by D. G. Seiler and C. L. Littler Academic, New York
    • O. J. Glembocki and B. V. Shanabrook, in Semiconductors and Semimetals, edited by D. G. Seiler and C. L. Littler (Academic, New York, 1992), Vol. 67, p. 222.
    • (1992) Semiconductors and Semimetals , vol.67 , pp. 222
    • Glembocki, O.J.1    Shanabrook, B.V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.