Multiple Andreev reflections in ballistic Nb-InGaAs/InP-Nb junctions

Superlattices and Microstructures

Volumn 25, Issue 5, 1999, Pages 851-859

  Schafers Th ^a   Neurohr, K ^a   Malindretos, J ^a   Kaluza, A ^a   Picard, J M ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON GAS; ENERGY GAP; NIOBIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUPERCONDUCTING MATERIALS;

ANDREEV REFLECTION; BALLISTIC TRANSPORT; JOSEPHSON EFFECT;

INTERFACES (MATERIALS);

EID: 0345103355     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0728     Document Type: Article

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