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Volumn 54, Issue 11, 1996, Pages 7658-7661

Low-temperature electron mobility in a real δ-doped semiconductor

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EID: 0344715106     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.7658     Document Type: Article
Times cited : (5)

References (21)
  • 1
    • 4243310853 scopus 로고
    • Note that parts of Figs. 3 and 4 in this paper are incorrect; however, the errors do not change the conclusions. The correct presentation is given in Phys. Rev. B 52, 11t518(E) (1995)
    • L. R. González, J. Krupski and T. Szwacka, Phys. Rev. B 49, 11t111 (1994). Note that parts of Figs. 3 and 4 in this paper are incorrect; however, the errors do not change the conclusions. The correct presentation is given in Phys. Rev. B 52, 11t518(E) (1995).
    • (1994) Phys. Rev. B , vol.49 , pp. 11111
    • González, L.1    Krupski, J.2    Szwacka, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.