Tight-binding description of disordered nanostructures: an application to porous silicon

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 564-568

  Taguena Martinez J ^a   Rubo, Yuri G ^a   Cruz, M ^b   Beltran M R ^c   Wang, C ^c  

^a INSTITUTO DE ENERGÍAS RENOVABLES   (Mexico)

^b INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^c INSTITUTO DE INVESTIGACIONES EN MATERIALES   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; ENERGY GAP; LIGHT ABSORPTION; LIGHT SCATTERING; MATHEMATICAL MODELS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PORE SIZE; QUANTUM THEORY; SPECTRUM ANALYSIS;

CRYSTALLINE SILICON; DISORDERED NANOSTRUCTURES; NONVERTICAL INTERBAND TRANSITIONS; QUANTUM CONFINEMENT; TIGHT BINDING;

POROUS SILICON;

EID: 0344642477     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00699-0     Document Type: Article

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