Anisotropic electrical transport property in La4BaCu5O13+δ and La4BaCu4NiO13+δ epitaxial thin films

Applied Physics Letters

Volumn 75, Issue 11, 1999, Pages 1598-1600

  Venimadhav, A ^a   Subramanya Herle, P ^a   Vedawyas, M ^a   Shivakumara, C ^a   Hegde, M S ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DEPOSITION; EPITAXIAL GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; LANTHANUM COMPOUNDS; OXIDE SUPERCONDUCTORS; PULSED LASER APPLICATIONS; YTTRIUM BARIUM COPPER OXIDES;

LANTHANUM BARIUM COPPER NICKEL OXIDES; LANTHANUM BARIUM COPPER OXIDES;

SUPERCONDUCTING FILMS;

EID: 0344641976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124766     Document Type: Article

References (15)

1. K. Char, L. Antognazza, and T. H. Geballe, Appl. Phys. Lett. 63, 2420 (1993).
2. L. P. Lee, K. Char, M. S. Colclogh, and G. Zaharchuk, Appl. Phys. Lett. 59, 3051 (1991).
3. R. Ramesh, A. Inam, B. Wilkens, W. K. Chan, T. Sands, J. M. Tarascon, D. K. Fork, T. H. Geballe, J. Evans, and J. Bullington, Appl. Phys. Lett. 59, 1782 (1991).
4. C. Michele, L. Er-Rakho, and B. Raveau, Mater. Res. Bull. 20, 667 (1985).
5. C. Michele, L. Er-Rakho, M. Herview, J. Pannitier, and B. Raveau, J. Solid State Chem. 68, 143 (1987).
6. G. Damazeau, C. Parent, M. Pouchard, and P. Hagenmuller, Mater. Res. Bull. 7, 913 (1972); J. B. Goodenough, N. F. Mott, G. Damazeau, M. Pouchard, and P. Hagenmuller, Mater. Res. Bull. 8, 647 (1972); A. Gupta, B. W. Hussey, A. M. Guloy, T. M. Shaw, R. F. Saraf, J. F. Bringley, and B. A. Scott, J. Solid State Chem. 108, 202 (1994).
7. G. Damazeau, C. Parent, M. Pouchard, and P. Hagenmuller, Mater. Res. Bull. 7, 913 (1972); J. B. Goodenough, N. F. Mott, G. Damazeau, M. Pouchard, and P. Hagenmuller, Mater. Res. Bull. 8, 647 (1972); A. Gupta, B. W. Hussey, A. M. Guloy, T. M. Shaw, R. F. Saraf, J. F. Bringley, and B. A. Scott, J. Solid State Chem. 108, 202 (1994).
8. G. Damazeau, C. Parent, M. Pouchard, and P. Hagenmuller, Mater. Res. Bull. 7, 913 (1972); J. B. Goodenough, N. F. Mott, G. Damazeau, M. Pouchard, and P. Hagenmuller, Mater. Res. Bull. 8, 647 (1972); A. Gupta, B. W. Hussey, A. M. Guloy, T. M. Shaw, R. F. Saraf, J. F. Bringley, and B. A. Scott, J. Solid State Chem. 108, 202 (1994).
9. J. G. Bednorz and K. A. Muller, Z. Phys. B 64, 189 (1986).
10. M. K. Wu, Jr. Ashburn, C. T. Torng, P. H. Hor, R. L. Meng, L. Gao, Z. H. Huang, Y. Q. Wang, and C. W. Chu, Phys. Rev. Lett. 58, 908 (1987).
11. C. Shivakumara, M. S. Hegde, K. Sooryanarayana, T. N. Guru Row, and G. N. Subbana, J. Mater. Chem. 8, 2695 (1998).
12. K. V. R. Prasad, K. B. R. Varma, A. R. Raju, K. M. Satyalakshmi, R. M. Malya, and M. S. Hegde, Appl. Phys. Lett. 63, 1895 (1993).
13. R. A. Rao and C. B. Eom, Mater. Sci. Eng. 56, 117 (1998).
14. J. B. Goodenough and A. Manthiram, J. Solid State Chem. 88, 115 (1990).
15. J. S. Dugdale, The Electrical Properties of Disordered Metals (Cambridge University press, London, 1995), p. 115.