Study of neutron damage in GaAs MESFETs

IEEE Transactions on Nuclear Science

Volumn 44, Issue 3 PART 1, 1997, Pages 840-846

  Meneghesso, G ^a,b   Paccagnella, A ^a,b   Camin, D V ^c   Fedyakin, N ^c   Pessina, G ^c   Canali, C ^d,e  

^a UNIVERSITY OF PADOVA   (Italy)

^b INFM   (Italy)

^c INFN SEZIONE DI MILANO   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^e INFM di Modena   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344574384     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.603762     Document Type: Article

References (13)

1. D.V: Camin, G. Pessina, and E. Previtali, "Dynamic and Noise Performance of Large Gate Area MESFETs Made in a Monolithic Process", IEEE Trans. Nucl. Sci., vol.NS-41 (1994), pp. 1260-1266
2. A. Castaldini, A. Cavallini, C. Del Papa, G. Fuochi, M. Alietti, C. Canali, F. Nava, A. Paccabgnella, C. Lanzieri, "Defects induced by protons and gamma-rays in semiinsulating GaAs Detectors" in Microstructure of Irradiated Materials edited by I.M. Robertson, L.E. Rehn, S.J.Zinkle, W. J. Phythian, MRS Materials Research society, Pittsburg, Pennsylvania, pp. 523-528.
3. E. Zanoni, A, Neviani, G. Meneghesso, E. De Bortoli, L. Vendrame, A. Rizzato, "Hot-electron-induced effects, light emission, breakdown and reliability problems in GaAs MESFET's, AlGaAs/GaAs HEMT's and AlGaAs/InGaAs PM-HEMT's." proc. of ESREF94, 1994, pp-261-272.
4. P.M. Mooney, "Deep donor levels (DX centers) in III-V semiconductors", J.Appl.Phys. 67 (3) 1990, pp-R1-R26.
5. J.Y. Chang, M. H. Badawi, A. De Cicco, "Neutron/Gamma Induced Damage Mechanisms and Synergistic Effects in GaAS MESFETs", IEEE Trans. on Nuclear Science, Vol.36, No.6, pp.2068-2075, December 1989.
6. D.V. Camin, N. Fedyakin, G. Pessina, E. Previtali, M. Sironi, "Improvements in Dynamic Noise Performance of Cryogenic GaAs Monolithic ASICs" IEEE Trans. on Nuclear Science, Vol. 43, No.3, pp. 1649-1655 June 1996.
7. B.K. Janousek, W.E. Yamada, R.J. Krantz, W. L. Bloss, "Neutron radiation effects in GaAs ion-implanted metalsemiconductor field-effect transistors" J. Appl. Phys. Vol. 63, No. 5, pp1678-1686, March 1988.
8. C. Canali, A. Paccagnella, E. Zanoni, C. Lanzieri, A. Cetronio, Comments on: "Impact Ionization in GaAs MESFETs" IEEE Elec. dev. Lett. Vol. 12, No. 2, Feb. 1991, pp. 80-81.
9. E. Zanoni, M. Manfredi, S. Bigliardi, A. Paccagnella, P. Pisoni, C. Tdesco, C. Canali, "Impact Ionization and Light Emission in AlGaAs/GaAs HEMT's" IEEE Trans. on El. Dev. Vol. 39, No. 8, Aug. 1992, pp. 1849-1857.
10. C. Canali, F. Magistrali, A. Paccagnella, M. Sangalli, C. tedesco, E. Zanoni, "Trap-related effect in AlGaAs/GaAs HEMT's" IEE proc. vol. 138, No.1,pp-104-108, Feb. 1991,
11. A. Paccagnella et al. "Frequency dispersion of trasconductance: a tool to characterize deep levels in III-V FETs", El. Letters, Vol.28, No.22, pp m2107-2108, 1992.
12. G. M. Martin, A. Mitonneau, A. Mircea, "Electron Traps in Bulk and Epitaxial GaAs Crystals", Electronics Letters, Vol. 13, No. 17, pp. 191-192, 1977.
13. S.M. Khanna, C. Rejeb, A. Jorio, M. Parenteau, C. Carlone, J. W. Gerdes Jr. "Electron and neutron Radiation-Induced Order Effect in Gallium Arsenide", IEEE Trans. on Nuclear Science, Vol. 40, No. 6, (3), 1993, pp.1350-1359.