MOVPE growth of AlGaAs on preferentially dry etched substrates

Journal of Crystal Growth

Volumn 89, Issue 2-3, 1988, Pages 360-362

  Tate, Akiyuki ^a   Ohmori, Yutaka ^a   Kobayashi, Morio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344559290     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(88)90421-6     Document Type: Letter

References (6)

1. Surface Damage of Reactive Ion Beam Etched GaAs