Effect of degree of order of silicon dioxide on localization processes of non-equilibrium charge carriers under the influence of gamma-radiation

Radiation Physics and Chemistry

Volumn 54, Issue 2, 1999, Pages 131-134

  Garibov, A A ^a   Velibekova, G Z ^a   Agaev, T N ^a  

^a INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; DEFECTS; GAMMA RAYS; MOLECULAR STRUCTURE; RADIATION EFFECTS;

CARRIER LOCALIZATION; CARRIER RECOMBINATION ANNIHILATION; NON-EQUILIBRIUM CHARGE CARRIERS;

SILICA;

SILICON DIOXIDE;

ARTICLE; ELECTRON SPIN RESONANCE; ENERGY ABSORPTION; GAMMA RADIATION; IONIZING RADIATION; SURFACE PROPERTY;

EID: 0344527742     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(98)00248-5     Document Type: Article

References (7)

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4. Klinov, F.M., Blaginina, L.A., Calentiev, V.A., Zatselin, A.F. 1985. Radiative charging, emission and spectral properties of quartz glasses. Ural. Politec. Inst., Sverdlovsk, Dep. v VINITI, N4510-B.89. 5. .
5. Miyozoky, T., Asuma, N.V., Shino, F.K., 1988. Comparison of long activation transfer of gamma-radiolysis of single crystalline quartz with amorphous silica. Radiat. Phys. Chem. 5, 695.
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