Far-infrared absorption in GaAs:Te liquid phase epitaxial films

Applied Physics Letters

Volumn 83, Issue 19, 2003, Pages 3990-3992

  Cardozo, B L ^a   Haller, E E ^b   Reichertz, L A ^c   Beeman, J W ^b  

^a University of California Berkeley   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL FILMS; FAR-INFRARED ABSORPTION;

CONCENTRATION (PROCESS); DOPING (ADDITIVES); FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; PHOTOCONDUCTIVITY; SIGNAL TO NOISE RATIO; SILICA; VAPOR PRESSURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0344514642     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1624491     Document Type: Article

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