BaMoO4 thin films prepared by electrochemical method at room temperature

Crystal Research and Technology

Volumn 38, Issue 11, 2003, Pages 935-940

  Bi, J ^a,b   Xiao, D Q ^a   Gao, D J ^a,b   Yu, P ^a   Yu, G L ^a   Zhang, W ^a   Zhu, J G ^a  

^a SICHUAN UNIVERSITY   (China)

^b SICHUAN NORMAL UNIVERSITY   (China)

Author keywords

BaMoO4 electrochemical method; Thin film

Indexed keywords

BARIUM COMPOUNDS; CRYSTAL STRUCTURE; CRYSTALLIZATION; CURRENT DENSITY; ELECTROCHEMISTRY; MOLYBDENUM; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

TETRAGONAL TAPERS;

THIN FILMS;

EID: 0344496732     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310116     Document Type: Article

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