The hot carrier dynamics in InGaN multi-quantum well structure

Physica Status Solidi (B) Basic Research

Volumn 240, Issue 2, 2003, Pages 392-395

  Shikanai, A ^a   Kojima, K ^a   Omae, K ^b   Kawakami, Y ^a   Narukawa, Y ^c   Mukai, T ^c   Fujita, Sg ^a  

^a KYOTO UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344495469     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200303256     Document Type: Conference Paper

References (6)

1. C.-K. Sun, F. Vallé, S. Keller, J. E. Bowers, and S. P. DenBaars, Appl. Phys. Lett. 70, 2004 (1997).
2. K. Omae, Y. Kawakami, Sg. Fujita, M. Yamada, Y. Narukawa, and T. Mukai, Phys. Rev. B 65, 077308(2002).
3. A. Shikanai, T. Deguchi, T. Sota, T. Kuroda, A. Tackeuchi, S.Chichibu, and S. Nakamura, Appl. Phys. Lett. 76, 454 (2000).
4. Fei Chen, M. C. Cheung, Paul M. Sweeney, W. D. Kirkey, M. Furis, and A. N. Cartwrighta, Appl. Phys. Lett. 93, 4993 (2003).
5. J. Shah, Hot carriers in semiconductor nanostructures: physics and applications (Academic Press, New York, 1992).
6. Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai, and S. Nakamura, Phys. Rev. B 55, R1938 (1997).