Development of combinatorial ion implantation system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5867-5868

  Sato, Yoshiyuki ^a   Sakaguchi, Isao ^b   Suzuki, Mineharu ^a   Haneda, Hajime ^b  

^a NTT Advance Technology Corporation   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Combinatorial; Doping; Ion implantation

Indexed keywords

DIGITAL TO ANALOG CONVERSION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE MEASUREMENT; ELECTROSTATIC DEVICES; ION BEAMS; SCANNING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SURFACE TREATMENT;

DIGITAL WAVEFORM GENERATOR; ELECTROSTATIC SCANNING IMPLANTER;

ION IMPLANTATION;

EID: 0344494485     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5867     Document Type: Article

References (5)

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4. W. Kern: Handbook of Semiconductor Wafer Cleaning Technology (Noyes Publications, New Jersey, 1993) p. 18.
5. W. E. Beadle, R. D. Plummer and J. C. Tsai: Quick Reference Manual for Silicon Integrated Circuit Technology (John Wiley & Sons, 1985) p. 7.