Dielectric and ferroelectric properties of in-plane lead lanthanum titanate thin films

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 887-890

  Song, Z T ^a   Chan, H L W ^b   Choy, C L ^b   Lin, C L ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Abnormal electrical properties; Buffer layer; Hillock

Indexed keywords

ELECTRIC FIELDS; GRAIN BOUNDARIES; HEAT TREATMENT; INTERFACES (MATERIALS); LEAD COMPOUNDS; SILICA; THERMODYNAMIC STABILITY;

BUFFER LAYERS;

THIN FILMS;

EID: 0344490388     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)01016-X     Document Type: Conference Paper

References (3)

1. Xu B., Ye Y., Cross L.E., Bernstein J.J. Appl. Phys. Lett. 74:1999;3549.
2. Song Z.T., Chong N., Chan H.L.W., Choy C.L. Appl. Phys. Lett. 79:2001;668.
3. Song Z.T., Ren W., Wang S.X., Wang L.M., Lin C.L., Zhang L.Y., Yao X. J. Phys. D: Appl. Phys. 33:2000;764.