Low-loss GaInAs-based waveguides for high-performance 5.5 μm InP-based quantum cascade lasers

IEE Proceedings: Optoelectronics

Volumn 150, Issue 4, 2003, Pages 284-287

  Scarpa, G ^a   Ulbrich, N ^a   Bohm G ^a   Abstreiter, G ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

GALLIUM INDIUM ARSENIDE; QUANTUM CASCADE LASERS; WAVEGUIDE DESIGN;

QUANTUM WELL LASERS;

EID: 0344465498     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030787     Document Type: Article

References (12)

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