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Volumn 82, Issue 6, 1997, Pages 3125-3128

The potential formation of O2- on an oxidizing porous silicon surface a source of oxygen atoms

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EID: 0344437897     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366154     Document Type: Article
Times cited : (10)

References (35)
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