Electrostatic model for the dielectric permittivity of ferroelectric films with 90° domain structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 B, 2003, Pages 6183-6187

  Ricinschi, Dan ^a   Ishibashi, Yoshihiro ^b   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

^b AICHI SHUKUTOKU UNIVERSITY   (Japan)

Author keywords

90 domain structures; Dielectric permittivity; Ferroelectric films

Indexed keywords

ANISOTROPY; APPROXIMATION THEORY; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ELECTROSTATICS; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PERMITTIVITY; STRAIN; THICKNESS MEASUREMENT;

DIELECTRIC PERMITTIVITY; DOMAIN STRUCTURE;

FERROELECTRIC THIN FILMS;

EID: 0344309088     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6183     Document Type: Article

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